aug.1998 auxiliary cathode connector (red) 390 ?8 gate (white) f 3.5 depth 2.2 ?0.2 cathode 0.4 min 0.4 min type name anode f 47 f 47 f 75 max 26 ?0.5 f 3.5 depth 2.2 ?0.2 mitsubishi gate turn-off thyristors FG1000BV-90DA high power inverter use press pack type FG1000BV-90DA outline drawing dimensions in mm application inverters, d.c. choppers, induction heaters, d.c. to d.c. converters. l i tqrm repetitive controllable on-state current ..........1000a l i t(av) average on-state current .......................400a l v drm repetitive peak off state voltage ..................4500v l anode short type a a a ka a 2 s a/ m s v v a a w kw w w c c kn g v dm = 3375v, t j = 125 c, c s = 0.7 m f, l s = 0.3 m h f = 60hz, sine wave q = 180 , t f = 70 c one half cycle at 60hz one cycle at 60hz v d = 2250v, i gm = 20a, t j = 125 c recommended value 13 standard value repetitive controllable on-state current rms on-state current average on-state current surge (non-repetitive) on-state current current-squared, time integration critical rate of rise of on-state current peak forward gate voltage peak reverse gate voltage peak forward gate current peak gate reverse current peak forward gate power dissipation peak reverse gate power dissipation average forward gate power dissipation average reverse gate power dissipation junction temperature storage temperature mounting force required weight i tqrm i t(rms) i t(av) i tsm i 2 t d it /d t v fgm v rgm i fgm i rgm p fgm p rgm p fg(av) p rg(av) t j t stg symbol parameter conditions ratings 1000 630 400 8.4 2.9 10 5 1000 10 17 60 500 240 15 45 100 C40 ~ +125 C40 ~ +150 12 ~ 15 530 unit v rrm v rsm v r(dc) v drm v dsm v d(dc) unit symbol parameter v v v v v v voltage class 90da 17 17 17 4500 4500 3600 repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage + non-repetitive peak off-state voltage + dc off-state voltage + + : v gk = C2v maximum ratings
aug.1998 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 t j = 125? 10 0 23 5710 1 4 2 23 5710 2 6 8 10 0 10 0 23 10 2 5710 3 23 5710 4 23 5710 5 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v fgm = 10v v gt = 1.5v p fg(av) = 45w i fgm = 60a t j = 25? p fgm = 240w i gt = 2500ma 0.050 0 23 10 ? 5710 ? 23 10 0 5710 1 23 5710 ? 23 5710 0 0.020 0.030 0.040 0.010 0.045 0.015 0.025 0.035 0.005 on-state current (a) on-state voltage (v) maximum on-state characteristic surge on-state current (ka) conduction time (cycles at 60hz) rated surge on-state current gate voltage (v) gate current (ma) gate characteristics thermal impedance (?/ w) time (s) maximum thermal impedance characteristic (junction to fin) 4.0 100 100 100 10 1.5 2500 0.03 v ma ma ma v/ m s m s a v ma c/w on-state voltage repetitive peak reverse current repetitive peak off-state current reverse gate current critical rate of rise of off-state voltage turn-on time peak gate turn-off current gate trigger voltage gate trigger current thermal resistance t j = 125 c, i tm = 1000a, instantaneous measurment t j = 125 c, v rrm applied t j = 125 c, v drm applied, v gk = C2v t j = 125 c, v rg = 17v t j = 125 c, v d = 2250v, v gk = C2v t j = 125 c, i tm = 1000a, i gm = 20a, v d = 2250v junction to fin mitsubishi gate turn-off thyristors FG1000BV-90DA high power inverter use press pack type electrical characteristics symbol parameter test conditions limits min typ max unit v tm i rrm i drm i rg d v /d t t gt i gqm v gt i gt r th(j-f) t gq turn-off time t j = 125 c, i tm = 1000a, v dm = 3375v, d igq /d t = C30a/ m s v rg = 17v, c s = 0.7 m f, l s = 0.3 m h dc method : v d = 24v, r l = 0.1 w , t j = 25 c 20 m s 330 1000 performance curves
aug.1998 2000 1500 1250 750 250 0 400 0 500 1000 1750 100 200 300 q = 30? 60? 90? 120? 180? resistive, inductive load q 360? 140 120 110 90 70 60 400 0 80 100 130 100 200 300 q = 30? 60? 90? 180? 120? resistive, inductive load q 360? 2000 1500 1250 750 250 0 800 0 100 300 500 700 500 1000 1750 200 400 600 dc 270? q = 30? 60? 90? 120? 180? 360? q resistive, inductive load 140 120 100 80 60 130 110 90 70 50 40 800 0 200 400 600 700 100 300 500 360? q resistive, inductive load q = 30? 90? 180? dc 270? 60? 120? 8000 6000 5000 3000 1000 0 140 e60 e20 20 60 100 2000 4000 7000 v d = 5 ~ 20v i t = 25 ~ 200a half sine wave 10.0 8.0 6.0 4.0 2.0 0 50 0 10 20 30 40 t gt t d i t = 1000a, v d = 2250v d it /d t = 500a/ m s d ig /d t = 10a/ m s t j = 125?c on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (single-phase half wave) fin temperature (?c) average on-state current (a) allowable fin temperature vs. average on-state current (single-phase half wave) on-state power dissipation (w) average on-state current (a) maximum on-state power dissipation characteristics (rectangular wave) fin temperature (?c) average on-state current (a) allowable fin temperature vs. average on-state current (rectangular wave) gate trigger current (ma) junction temperature (?c) gate trigger current vs. junction temperature (typical) turn on time t gt , turn on delay time t d ( m s) turn on gate current (a) turn on time, turn on delay time vs. turn on gate current (typical) mitsubishi ga te turn-off thyrist ors fg1000bv -90da high power inverter use press p ack type
aug.1998 25 20 15 10 5 0 1000 200 400 600 800 t gq t s v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 17v c s = 0.7 m f l s = 0.3 m h t j = 125? 50 40 30 20 10 0 30 10 20 40 50 t gq t s v d = 2250v v dm = 3375v i t = 1000a v rg = 17v c s = 0.7 m f l s = 0.3 m h t j = 125? 500 400 300 200 100 0 1000 200 400 600 800 v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 17v c s = 0.7 m f l s = 0.3 m h t j = 125? 500 400 300 200 100 0 30 10 20 40 50 v d = 2250v v dm = 3375v i t = 1000a v rg = 17v c s = 0.7 m f l s = 0.3 m h t j = 125? 3.0 2.5 2.0 1.5 1.0 0.5 1000 200 400 600 800 v d = 2250v v dm = 3375v d igq /d t = ?0a/ m s v rg = 17v c s = 0.7 m f l s = 0.3 m h t j = 125? 1.6 1.2 0 1200 200 400 600 800 1000 0.4 0.8 1.4 1.0 0.2 0.6 v d = 2250v i gm = 25a d ig /d t = 10a/ m s c s = 0.7 m f r s = 5 w t j = 125? d it /d t = 300a / m s 200a / m s 100a / m s turn off time t gq , turn off storage time t s ( m s) rate of rise of turn off gate current (a / m s) turn off time, turn off storage time vs. rate of rise of turn off gate current (typical) turn off time t gq , turn off storage time t s ( m s) turn off current (a) turn off time, turn off storage time vs. turn off current (typical) turn off gate current (a) rate of rise of turn off gate current (a / m s) turn off gate current vs. rate of rise of gate current (typical) turn off gate current (a) turn off current (a) turn off gate current vs. turn off current (typical) switching energy eon (j/p) turn on current (a) turn on switching energy (maximum) switching energy eoff (j/p) turn off current (a) turn off switching energy (maximum) mitsubishi gate turn-off thyristors FG1000BV-90DA high power inverter use press pack type
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